Noise in ZnO Nanowire Field Effect Transistors
The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 × 10−3 was estimated. This value is within the range reported for CMOS FETs with high-k
dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels compared to in vacuum. At low temperature,
random telegraph signals are observed in the drain current.
Keywords: 1/F NOISE; NANOWIRE; RANDOM TELEGRAPH SIGNAL; ZINC OXIDE
Document Type: Research Article
Publication date: 01 February 2009
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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