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Study of Nitrogen Diffusion Profile of Low Resistivity Diffusion Barrier by Resputtering Technology

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One of the major challenges in the integrated circuit beyond 90 nm is to fabricate low resistivity Cu diffusion barrier layer in the metal multilevel interconnect. Ta/TaN bilayer is one of the best candidates for Cu metal diffusion layer. It provides the advantage good diffusion performance between Cu and low-k dielectric layer. However, the resistivity is large deviation from tantalum phase variation. This is because of Tantalum of bilayer easily found in beta-phase, which is high resistance. This paper proposed a low resistivity alpha-Ta thin films were grown by treatment-TaN using Argon plasma treatment on TaN substrate. The argon treatment redistribute nitrogen profile between Ta and TaN and create a Ta(N) interface. X-ray diffraction analyses show that the interface film is composed of b.c.c.-Ta(N) grains. This Ta/treatment TaN provide new method to fabricated b.c.c.-Ta(N) difference from the previously report deposition by sputtering process. The resistivity will decrease nitrogen concentration to provide a favorable environment to promote low resistivity Tantalum alpha-phase formation.
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Document Type: Research Article

Publication date: February 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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