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Phenyl-Naphthyl Amine Effect of New Phenothiazine Derivatives with High T g for Hole Injection and Hole Transporting Materials

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We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3′,7′,3″,7″-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high T g in the range of 175–202 °C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm2.
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Document Type: Research Article

Publication date: 01 October 2008

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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