Conductance and Polarisability of C60 Films
Thin films of C60 deposited in vacuum are studied using current–voltage (I–V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 MΩcm for the as-deposited films at room temperature. The I–V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remnant polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C60. Temperature dependent measurements in the range 290–365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8–1.0 eV. With further temperature increase the C60 films restructure leading to an increase in grain size and a change of the electrical properties with I–V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C60 films under their exposure to an ambient atmosphere is considered and discussed.
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Document Type: Research Article
Publication date: April 1, 2007
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