Morphology and Composition of InAs/GaAs Quantum Dots
Surface compositional maps of self-organized InAs/GaAs quantum dots were obtained with laterally resolved photoemission spectroscopy. We found a surface In concentration of about 0.85 at the center of the islands which decreases to 0.75 on the wetting layer. Comparison with concentration
values found in the core of similar dots suggests a strong In segregation on the topmost surface layers of the dots and on the surrounding wetting layer. Furthermore, the morphological properties of the dots such as size and density have been measured with plan-view transmission electron microscopy
and low energy electron microscopy.
Keywords: CONCENTRATION MAP; IN SEGREGATION; INAS/GAAS; LEEM; PHOTOEMISSION SPECTROSCOPY; QUANTUM DOTS; TEM; XPEEM
Document Type: Research Article
Publication date: 01 June 2007
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