Application of Selective Implantation in Al0.5Ga0.5As/In 0.25Ga0.75As/GaAs Pseudomorphic Single Quantum Wire Structures
A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.
Keywords: ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURE; IMPLANTATION; PHOTOLUMINESCENCE; SINGLE QUANTUM WIRE
Document Type: Communications
Affiliations: 1: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China 2: Department of Electronic Materials Engineering, Research School of Physical Science and Engineering, The Australian National University, Canberra, ACT 0200, Australia 3: Electron Microscope Unit and Australian Key Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006, Australia
Publication date: 01 December 2001
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