Investigation of Dual-Phase-Lag Model with Robin Boundary Condition in Metal-Oxide-Semiconductor-Field-Effect Transistor

This paper investigates the non-Fourier transient heat transfer in a two-dimensional metal-oxidesemiconductor field-effect transistor (MOSFET). The dual-phase-lag (DPL) model with a specific normalization procedure is introduced for the modeling of nanoscale heat transfer. Boundary conditions are selected similar to what existed in a real transistor, both uniform heat generations within the transistor are applied, and the end parts of the top boundary which are in contact with the metallic material are given by the robin boundary condition. A temperature-jump boundary condition is used on the interface oxide semiconductor in order to consider the boundary phonon scattering. The finite element method has been employed to generate the numerical results which are illustrated for a silicon MOSFET corresponding to the Knudsen number of 10. The results are presented at real times less than 50 ps. It was found that the combination of the DPL model with mixed-type temperature boundary condition is able to predict the heat flux and temperature distribution obtained from the ballistic-diffusive equations (BDE).