Numerical Simulation of GaN-MOCVD Showerhead Reactor
A systematic numerical simulation and study was performed to investigate transport process by Computational Fluid Dynamics (CFD) method in this paper. Numerical simulation results were observed that can be effectively restrain thermal buoyancy effects by increasing inlet flux (Q)
and decreasing the pressure (P) of reactor to obtain an uniform distribution flow field inside of the reactor under the condition of certain material growth process parameters range. The results of numerical simulation not only has an important guiding role during design mechanical
structure of GaN-MOCVD but also has an important reference value to high quality material growth process parameters optimization and debugging.
Keywords: CFD; GaN-MOCVD Reactor; Numerical Simulation; Thermal Buoyancy Effects
Document Type: Research Article
Affiliations: 1: National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang Jiangxi 330047, China 2: Nanchang Yellow Green Lighting Co., Ltd., Nanchang Jiangxi 330047, China
Publication date: 01 December 2016
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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