A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor
PNIN DG-TFET (PNIN Double-Gate Tunneling FET) with steep subthreshold swing is considered as a promising device for low power applications. In this paper, a pseudo two-dimensional threshold voltage model is proposed for this low power semiconductor device. The validity of the proposed
model is tested by comparison to 2D device simulation. It is demonstrated that the proposed model can correctly predicts the variations of threshold voltage with device parameters. This model provides valuable reference to the PNIN DG-TFET device design, simulation and fabrication.
Keywords: Band-to-Band Tunneling; Double Gate; Pseudo Two-Dimensional; Threshold Voltage
Document Type: Research Article
Affiliations: 1: School of Electrical and Control Engineering, Xi’ian University of Science and Technology, Xi’an 710054, China 2: School of Electrical and Control Engineering, Xi’an University of Science and Technology, Xi’an 710054, China
Publication date: 01 August 2016
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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