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Simulation Analysis of Single-Nanowire Silicon Solar Cells: A Finite Element Method

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Herein we present a theoretical analysis on light-harvesting and electrical transport properties of the axial single-nanowire silicon solar cells based on the p-type/intrinsic/n-type (pin) silicon nanowires (SiNW). Our results are obtained by three-dimensional (3D) finite-element-method (FEM) simulations, and show wavelength-dependent like-Fabry-Perot and whispering-gallery resonant absorption modes within the silicon nanowire structure. Under one-sun solar conditions (AM 1.5 G), the axial pin SiNW devices exhibit an open-circuit voltages V oc of 0.47 V, a maximum short-circuit current i sc of 47.64 pA, and a maximum conversion efficiency of 1.76%. These results show good agreement with the previous experimental data. The complete three-dimensional simulations provide a means to understand and design nanowire solar cells.

Keywords: Electrical Transport Properties; Finite Element Method; Light-Harvesting; Single-Nanowire Silicon Solar Cells

Document Type: Research Article

Affiliations: 1: Department of Physics, Shanghai University of Electric Power, Shanghai, 201300, China 2: Anhui University of Science and Technology, Huainan, 2032001, China 3: Department of Physics, China Jiliang University, Hangzhou, 310018, China

Publication date: 01 May 2016

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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