Simulation Analysis of Single-Nanowire Silicon Solar Cells: A Finite Element Method
Herein we present a theoretical analysis on light-harvesting and electrical transport properties of the axial single-nanowire silicon solar cells based on the p-type/intrinsic/n-type (p–i–n) silicon nanowires (SiNW). Our results are obtained
by three-dimensional (3D) finite-element-method (FEM) simulations, and show wavelength-dependent like-Fabry-Perot and whispering-gallery resonant absorption modes within the silicon nanowire structure. Under one-sun solar conditions (AM 1.5 G), the axial p–i–n
SiNW devices exhibit an open-circuit voltages V
oc of 0.47 V, a maximum short-circuit current i
sc of 47.64 pA, and a maximum conversion efficiency of 1.76%. These results show good agreement with the previous experimental data. The complete three-dimensional
simulations provide a means to understand and design nanowire solar cells.
Keywords: Electrical Transport Properties; Finite Element Method; Light-Harvesting; Single-Nanowire Silicon Solar Cells
Document Type: Research Article
Affiliations: 1: Department of Physics, Shanghai University of Electric Power, Shanghai, 201300, China 2: Anhui University of Science and Technology, Huainan, 2032001, China 3: Department of Physics, China Jiliang University, Hangzhou, 310018, China
Publication date: 01 May 2016
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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