Hole Mobility of Inversion Layer in Strained PMOS

With the framework of k · p perturbation theory, the E-K relation model of the hole mobility for inversion layer in uniaxial and biaxial strained Si PMOS are established. The results show that: (1) the orientation order of the mobility enhancement is (101) > (001) > (111) for both the uniaxial and biaxial strained technique; (2) The magnitude of the uniaxial stress will be applied less than the one of the biaxial case to improve PMOS performance using strained technique. (3) the mobility will be degraded under low magnitude strain for (001) biaxial strained Si PMOS, which is different from uniaxial strained case. Our results can provide valuable references to Si-based and other strained device and materials design.