X-Doped Graphene (X = N, F) as Two Electrodes and (h-BN) _m (m = 2–5) as the Insulator: A Nano Capacitor

Nanoscale dielectric capacitors have been widely studied due to their ability to store a high amount of energy. In this research, we have modeled one which is composed of a few dopants graphene layers including N, F (of second row in Mendeleev table) separated by an insulating medium of a few h-BN layers. It has been indicated that the N, F atoms are the suitable dopants for hetero-structures of the X-G/(h-BN) _m /X-G capacitor compared to those third row in Mendeleev table. It has been specifically studied the quantum and coulomb blocked effects of different h-BN/graphene including hetero-structures, stacks for multi dielectric properties of different (h-BN) _n /graphene. We have shown that the Quantum effect has appeared in small thickness of capacitor due to number of layers and this effect cannot occur in the layers more than 5 of h-BN, while the m = 3 is suitable layer for the capacitor simulation.