Raman Spectrum Stress Model of the Uniaxial/Biaxial Strained Ge Materials

The stress of the strained Ge material can be characterized by Raman spectroscopy. The position of Raman spectral peak of strained Ge material are related to factors such as: the magnitude of stress, the types of stress and the crystal face which be stressed. However there is still lack of the relevant reports. Based on the principle of Raman spectrum, the Secular equation and the Raman selection rule, the relationship between the Raman spectral shift and the strain tensor of uniaxial and biaxial (001), (101), (111) strained Ge material can be obtained. And then, we can establish the theoretical model of the relationship between the stress and the position of Raman spectral peak of the (001), (101), (111) uniaxial and biaxial strained Ge material depending on the Hooke’s law. So this paper provides an important theoretical reference for the test and analysis of strained Ge material stress.