Combining Out-of Plane Polarized Currents with Voltage Controlled Magnetic Anisotropy Magnetic Tunnel Junctions
In this paper we combine out-of-plane spin value Magnetic Tunnel Junctions (MTJ) with a Voltage controlled magnetic anisotropy (VCMA) MTJ in order to reduce the switching time of MTJs. We find that the switching time can be decreased significantly by combining an out-of-plane spin value
MTJ with a VCMA MTJ. With a Conventional Spin Value (CSV) MTJ we achieve a switching time of 5 ns but after combining both the effects, out-of-plane polarisation (OPPP) and VCMA, we are able to decrease the switching time to upto 0.022 ns which is approximately 227.27 times less than the CSV
device.
Keywords: MAGNETIC ANISOTROPY; MAGNETIC TUNNEL JUNCTIONS; MAGNETORESISTANCE; RANDOM ACCESS MEMORY
Document Type: Research Article
Publication date: 01 April 2015
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
- Editorial Board
- Information for Authors
- Submit a Paper
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content