InGaAs and HfO2 Based Junctionless Vertical Double Gate Metal Oxide Semiconductor Field Effect Transistor: Performance Analysis
In the present paper, a junctionless vertical double gate Metal Oxide Semiconductor Field Effect Transistor (JLVDGM) with InGaAs substrate and HfO2 dielectric has been proposed, to improve the performance of the conventional junctionless vertical Double Gate MOSFET and simulated using silvaco TCAD software. The performance of the JLVDGM has been analyzed by measuring the factors subthreshold slope, Drain Induced Barrier Lowering (DIBL), leakage current and threshold voltage roll-off at different channel lengths. It has been observed that the combination of InGaAs and HfO2 enables good electrostatic control over the channel and provides excellent improvement in the drive current, leakage as well as short channel effects (SCE).
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Document Type: Research Article
Publication date: January 1, 2015
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