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InGaAs and HfO2 Based Junctionless Vertical Double Gate Metal Oxide Semiconductor Field Effect Transistor: Performance Analysis

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In the present paper, a junctionless vertical double gate Metal Oxide Semiconductor Field Effect Transistor (JLVDGM) with InGaAs substrate and HfO2 dielectric has been proposed, to improve the performance of the conventional junctionless vertical Double Gate MOSFET and simulated using silvaco TCAD software. The performance of the JLVDGM has been analyzed by measuring the factors subthreshold slope, Drain Induced Barrier Lowering (DIBL), leakage current and threshold voltage roll-off at different channel lengths. It has been observed that the combination of InGaAs and HfO2 enables good electrostatic control over the channel and provides excellent improvement in the drive current, leakage as well as short channel effects (SCE).
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Keywords: DIELECTRICS; DRIVE CURRENT; GATE LENGTH; JUNCTIONLESS VERTICAL DOUBLE GATE MOSFET (JLVDGM); SHORT CHANNEL EFFECTS (SCE)

Document Type: Research Article

Publication date: January 1, 2015

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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