A Comparative Study of Si, Ge and GaAs Cylindrical Nanowire Transistors with Non Equilibrium Greens Function Approach
In this paper we compare the electrical behavior of Silicon (Si), Germanium (Ge) and Gallium Arsenide (GaAs) nanowire surrounding gate field effect transistors for high frequency applications. A fully ballistic quantum mechanical transport approach based on Non Equilibrium Greens Function
(NEGF) was employed to study electrical characteristics of cylindrical silicon nanowire transistors. We have taken effective mass approximation with the use of uncoupled mode space method (UMS) in this approach. We used cylindrical coordinate systems in our modeling to include exact sense
of cylindrical nanowire. We found that GaAs-NWT performance is better than others for microwave applications.
Keywords: EFFECTIVE MASS APPROXIMATION; NANOWIRE; NEGF; UMS
Document Type: Research Article
Publication date: 01 May 2014
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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