Performance Analysis of Dual Metal Gate Work Function in Junctionless Transistors
In this paper, dual metal gate (DMG) electrode work function concept is applied in junctionless transistors. Three different DMG structures along with the single metal gate (SMG) are studied and their performance with respect to the drive current (I
ON), unity gain
cut-off frequency (f
t) and output resistance (R
o) are compared using extensive TCAD simulations. Two different gate lengths, 100 nm and 50 nm, and two different gate oxide thicknesses, 1 nm and 3 nm, are explored. Two of the DMG structures, namely DMG-I
and II show superior performance compared to SMG devices. A permissible range of work functions which show performance enhancement against SMG device are suggested.
Keywords: DUAL METAL GATE; FT; JUNCTIONLESS TRANSISTOR; RO; SINGLE METAL GATE; TCAD; WORK FUNCTION
Document Type: Research Article
Publication date: 01 June 2013
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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