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Analysis on Residual Stress in Cu Film on Fe Substrate-Based on Electron Theory

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The average residual stress in electroplated Cu film on Fe substrate was measured in situ by cantilever beam test. The origin and the distribution of the residual stress in Cu film were investigated. The results show that the average residual stress and the distributed residual stress in Cu film were tensile stress and decrease with the increase of film thickness. The interfacial stress in Cu film is very large and the growth stress is very small. The average residual stress in Cu film, which was caused by the interfacial stress, was calculated roughly using a modified Thomas–Feimi–Dirac electron theory (TFDC). The experimental value of the average residual stress and the theoretical value were both tensile stress and were about equal. It shows that the theoretical calculation model of residual stress is of accuracy.
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Keywords: ELECTRON DENSITY; ELECTROPLATING; FILM; RESIDUAL STRESS

Document Type: Research Article

Publication date: September 1, 2012

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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