Fundamental Rules to Construct Highly Integrated Organic Nanowires as Nanodevices

Recent advances in inorganic nanowires techniques have led to more efficient and reliable electronic nanodevices as bipolar transistors, field effect transistors, junctions, logic-gate structures and applications from barcodes to LEDs. Otherwise, a true organic nanowire (ONW) device has not been realized. In this paper we describe few rules that will be useful to construct ONWs as well as the influence of mettalic contacts. Based on an equilibrium technique, we present electronic transport simulation for a well-known one-dimensional polymer prototype attached with donor/acceptor groups. Our results are consistent with: (i) asymmetric electronic transport (Charge Accumulation/Depletion-Voltage) curve for the ONW with and without the presence of contacts; (ii) for donor-polyacetylene-acceptor we find out assymetric nonresonance tunneling type conduction in the I–V curve; (iii) the aluminum atoms show to be a good candidate as mettalic contact when bonded with Sulfur atoms provoking rectification for lower values when compared with the system without Aluminum; (iv) For forward and reverse bias the resonance takes place suggesting in operational limit working as non-symetric bi-directional molecular field effect transistor (FET).