Analysis and Evaluation of Output Characteristics of Gaussian Doped Nanoscale MOSFET Using Green's Function Approach
With the current trend in miniaturisation, the estimation of the off and on state gate leakage current is an important aspect as far as power dissipation estimation is concerned. This paper deals with the development of Green's function based numerical analysis to determine the leakage
current in a Gaussian doped nano-scale MOSFET. The paper also throws light on various profiles in the active area of the device, such as channel potential profile. The outcome of the work is expected to be useful for device physicists, VLSI designers, and fabricators to determine the device
output characteristics and hence a useful ULSI/VLSI design.
Keywords: GAUSSIAN DOPED; GREEN'S FUNCTION; LEAKAGE CURRENT; NANOSCALE MOSFET; OUTPUT CHARACTERISTICS
Document Type: Research Article
Publication date: 01 October 2006
- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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