Highly efficient full adders based on carbon nanotubes field effect transistor technology
A full adder is the most important part of digital circuits, so optimizing this component improves the whole output parameter of digital circuits. In this paper a 28-transistors full adder, controversial dynamic and TG-Pseudo (Transmission Gate-Pseudo) full adders are designed based on CMOS (Complementary Metal Oxide Semiconductor) and CNTFET (Carbon Nanotube Field Effect Transistor) technologies. Then different parameters of full adders are simulated, such as power, delay propagation and PDP (power delay product). The results of simulation in different supply voltages, temperatures and intrinsic parameters are presented. The results of simulation show that the best output parameters can be achieved by full adders based on CNTFET technology compared with those based on 65 nm-CMOS technology.
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