Investigation of Characteristics and Mechanism of Formation of Gas Layer on the Surface of Semiconductor Nanoparticle: ZnO and Co3O4
An analytical expression is obtained for the determination of the maximum number of adsorbing gas molecules on the surface of nanoparticles, depending on their size. The coefficient of filling and the density of the first adsorption layer are determined. The stages of formation of adsorption layers on the surface of nanoparticles are determined. The process of adsorption of gas molecules to the surface of nanoparticles are described using the diffusion equation. Expressions are obtained for the dependence of the thickness and rate of formation of the gas adsorption layer on the surface of a semiconductor nanoparticle on the time, concentration and type of gas, the size and type of the semiconductor nanoparticle. The values of the accumulated mass of the gas and its velocity on the surface of the nanoparticle are calculated. On the base of obtained results of the thickness of the adsorption layer of gas and the accumulated mass, the number and structure (type of filling) of the layers were determined.
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Document Type: Research Article
Publication date: September 1, 2018
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