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Investigation of Characteristics and Mechanism of Formation of Gas Layer on the Surface of Semiconductor Nanoparticle: ZnO and Co3O4

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An analytical expression is obtained for the determination of the maximum number of adsorbing gas molecules on the surface of nanoparticles, depending on their size. The coefficient of filling and the density of the first adsorption layer are determined. The stages of formation of adsorption layers on the surface of nanoparticles are determined. The process of adsorption of gas molecules to the surface of nanoparticles are described using the diffusion equation. Expressions are obtained for the dependence of the thickness and rate of formation of the gas adsorption layer on the surface of a semiconductor nanoparticle on the time, concentration and type of gas, the size and type of the semiconductor nanoparticle. The values of the accumulated mass of the gas and its velocity on the surface of the nanoparticle are calculated. On the base of obtained results of the thickness of the adsorption layer of gas and the accumulated mass, the number and structure (type of filling) of the layers were determined.
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Keywords: ACCUMULATION OF GAS MASS; ADSORPTION KINETICS; ADSORPTION LAYER OF GAS; SEMICONDUCTOR NANOPARTICLES; THICKNESS OF ADSORPTION LAYER

Document Type: Research Article

Publication date: September 1, 2018

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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