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Effect of Thermoelectric Coupling Parameter in a Semiconducting Medium Under Photothermal Theory

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The purpose of this paper is to study the two dimensional deformation in a semi-infinite semiconducting medium. The deformation is caused subjected to a mechanical force applied along the interface of elastic layer of thickness h and a semiconducting medium. Normal Mode analysis has been used to obtain the exact expression of normal displacement, normal force stress, temperature distribution and carrier density. The effect of this force and thermoelectric coupling parameter on the displacement component, force stress, temperature distribution and carrier density has been depicted graphically.
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Keywords: COUPLING PARAMETER; ELASTIC LAYER; PHOTOTHERMAL; THERMOELASTICITY

Document Type: Research Article

Publication date: March 1, 2017

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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