Intersubband Optical Transitions in Nitride Based Group-III Semiconductor Quantum Dots
Binding energy of a hydrogenic donor impurity and the intersubband optical transition energy in Ga0.9In0.1N/GaN and Al0.395In0.605N/AlN quantum dots are studied taking into account the effects of spatial confinement and the strain contribution. The built-in internal electric field includes the piezoelectricity and spontaneous polarization. The intraband optical transition energies are obtained in the quantum dots. The largest intersubband optical transition energies of electron as a function of dot radius are computed. The oscillator strength and the radiative life time are demonstrated. The intersubband optical absorption coefficients in Ga0.9In0.1N/GaN and Al0.395In0.605N/AlN quantum dots for the constant radius 20 Å are obtained. The result shows that the largest intersubband transition energy can be controlled with the geometrical confinement. The obtained results will motivate further research works on potential applications in designing the opto-electronic devices and the telecommunication networks.
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Document Type: Research Article
Publication date: December 1, 2014
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