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Intersubband Optical Transitions in Nitride Based Group-III Semiconductor Quantum Dots

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Binding energy of a hydrogenic donor impurity and the intersubband optical transition energy in Ga0.9In0.1N/GaN and Al0.395In0.605N/AlN quantum dots are studied taking into account the effects of spatial confinement and the strain contribution. The built-in internal electric field includes the piezoelectricity and spontaneous polarization. The intraband optical transition energies are obtained in the quantum dots. The largest intersubband optical transition energies of electron as a function of dot radius are computed. The oscillator strength and the radiative life time are demonstrated. The intersubband optical absorption coefficients in Ga0.9In0.1N/GaN and Al0.395In0.605N/AlN quantum dots for the constant radius 20 Å are obtained. The result shows that the largest intersubband transition energy can be controlled with the geometrical confinement. The obtained results will motivate further research works on potential applications in designing the opto-electronic devices and the telecommunication networks.
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Keywords: EXCITON; OSCILLATOR STRENGTH; QUANTUM DOT

Document Type: Research Article

Publication date: December 1, 2014

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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