Manganese Doping Effects in Layered Na1.85Li0.10K0.05Ti3O7 Ceramic: A.C. Conductivity and Dielectric-spectroscopic Studies
The manganese doped derivatives of layered Na1.85Li0.10K0.05Ti3O7 material have been synthesized by high temperature solid-state reaction. A.c. conductivity and Dielectric-spectroscopic measurements of all manganese doped derivatives were carried out in the temperature range from 350–775 K. The log(σac T) versus 1000/T plots have been divided into four temperature regions namely I–IV. Lowest temperature region I is attributed to electronic hopping conduction with exchangeable (alkali ion hopping) interlayer ionic conduction. In region II, associated interlayer ionic conduction is dominated over electronic hopping and alkali ion hopping conduction. Moreover, the conduction in the next region III is due to alkali ion hopping conduction, while in highest temperature region IV the mechanism of conduction seems to be unassociated/modified interlayer ionic along with alkali ion hopping conduction. The dependence of loss tangent (tan δ) and relative permittivity (εr ) on temperature and frequency justify the substitution of manganese as Mn3+ at Ti4+ sites and remaining as Mn2+ at alkali sites in the interlayer space. These studies on these compounds reflect; electronic, dipolar and space charge polarization mechanisms of losses in the entire temperature range of study.
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Document Type: Research Article
Publication date: December 1, 2013
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