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Manufacturing of Planar Field-Effect Heterotransistors with Decreasing Their Dimensions and Simplification of Their Constructions

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In this paper we introduce an approach to decrease dimensions of planar field-effect transistors by using dopant diffusion in a semiconductor heterostructure and optimization of annealing time. Some conditions to maximal increasing of the effect have been formulated. We also introduce an approach to decrease price of manufacturing of considered transistors due to simplification of their construction.
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Keywords: DECREASING OF DIMENSIONS OF FIELD-EFFECT TRANSISTORS; FIELD-EFFECT TRANSISTORS; SIMPLIFICATION OF CONSTRUCTION OF FIELD-EFFECT TRANSISTORS

Document Type: Research Article

Publication date: December 1, 2013

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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