An Approach for Analytical Modeling of Modification of Porosity of Materials Heterostructure Under Influence Mechanical Stress
In this paper we analytically model relaxation of mechanical stress in a semiconductor heterostructure, which consist of a substrate and a porous epitaxial layer. We take into account dynamics of vacancies in pores of the epitaxial layer under influence of mechanical stress during the modeling. We show, that using porous epitaxial layer leads to decreasing of mechanical stress and at the same time to increasing of density of porous layer.
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Document Type: Research Article
Publication date: December 1, 2013
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