Skip to main content
padlock icon - secure page this page is secure

An Approach for Analytical Modeling of Modification of Porosity of Materials Heterostructure Under Influence Mechanical Stress

Buy Article:

$105.00 + tax (Refund Policy)

In this paper we analytically model relaxation of mechanical stress in a semiconductor heterostructure, which consist of a substrate and a porous epitaxial layer. We take into account dynamics of vacancies in pores of the epitaxial layer under influence of mechanical stress during the modeling. We show, that using porous epitaxial layer leads to decreasing of mechanical stress and at the same time to increasing of density of porous layer.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
No Metrics

Keywords: DECREASING OF MECHANICAL STRESS; INCREASING OF DENSITY OF POROUS LAYER; POROUS LAYER; SEMICONDUCTOR HETEROSTRUCTURE

Document Type: Research Article

Publication date: December 1, 2013

More about this publication?
  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content
Cookie Policy
X
Cookie Policy
Ingenta Connect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more