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In2S3 Thin Films Produced by Thermal Evaporation for Solar Cell Applications

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In2S3 thin films were prepared on glass substrates. X-ray diffraction spectra showed that the In2S3 thin films showed amorphous structures before annealing and tetragonal structures after annealing up to 400 °C were preferentially grown along the (220) orientation. The crystal structure was defective spinel (tetragonal) with lattice constants of a = 7.62 Å and c = 32.33 Å. Energy band gap of the layers have been calculated from the optical transmittance data in the wavelength range 500–2000 nm. The optical transmittance of the films was decreased from 82% to 64% and the band gap varied in the range of 1.93–2.95 eV depended on preparation conditions. The AFM topography images also clearly different surface profile of these thin films. Grain size and roughness of the thin films was greatly decreased after annealing. An annealing temperature of 400 °C during 60 min was the optimal conditions.
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Document Type: Research Article

Publication date: December 1, 2013

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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