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Analytical Approach to Model Distributions of Concentrations of Charge Carriers in a Diffusive-Junction Rectifiers with Optimized Distributions of Dopants

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It has been recently shown, that manufacturing a diffusion-junction rectifier in a multilayer structure at optimal relation between annealing time, materials and thicknesses of layers of the structure gives us possibility to increase sharpness of pn-junctions and to increase homogeneity of dopant distribution in enriched area. In this paper we estimate distributions of concentrations of charge carriers in the pn-junction. At the same time we introduce an analytical approach to estimate the distributions. The approach gives us possibility to take into account spatiotemporal variations of properties of materials and several effects at one tine (diffusion of charge carriers etc.), which recently have taken into account independently from each other.
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Document Type: Research Article

Publication date: June 1, 2013

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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