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Influence of Drain of Dopant on Distribution of Dopant in Diffusion-Heterojunction Rectifiers

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It has been recently shown, that manufacturing of pn-junctions by dopant diffusion or ion implantation in heterostructures and optimization of annealing time leads to increasing of their sharpness and homogeneity of dopant distribution in enriched area. In this paper we consider influence of defects of doped structure (mismatch dislocations and similar), which became as drain of atoms of dopant, on dopant distribution in diffusive-junction rectifier.
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Keywords: DIFFUSION-HETEROSTRUCTURE RECTIFIER; INFLUENCE OF DRAIN OF DOPANT; OPTIMIZATION OF TECHNOLOGICAL PROCESS

Document Type: Research Article

Publication date: June 1, 2013

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  • Journal of Advanced Physics is an interdisciplinary peer-reviewed journal consolidating research activities in all experimental and theoretical aspects of advanced physics. The journal aims in publishing articles of novel and frontier physics that merit the attention and interest of the whole physics community. JAP publishes review articles, full research articles, short communications of important new scientific and technological findings in all latest research aspects of physics.
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