Influence of Drain of Dopant on Distribution of Dopant in Diffusion-Heterojunction Rectifiers
It has been recently shown, that manufacturing of p–n-junctions by dopant diffusion or ion implantation in heterostructures and optimization of annealing time leads to increasing of their sharpness and homogeneity of dopant distribution in enriched area. In this paper we consider influence of defects of doped structure (mismatch dislocations and similar), which became as drain of atoms of dopant, on dopant distribution in diffusive-junction rectifier.
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Document Type: Research Article
Publication date: June 1, 2013
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