The Photoemission from Quantum Wires of Heavily Doped Nonparabolic Materials
In this paper an attempt is made to study the photo emission (PE) from heavily doped quantum wires (HDQW) of non parabolic semiconductors on the basis of newly formulated electron dispersion laws, taking HDQW of nonlinear optical, III–V and II–VI compounds. It has been found, taking HDQW of CdGeAs2, n-InAs, n-InSb and CdS as examples that photocurrent oscillates with changing film thickness in periodic manner and exhibits spikes for particular values of film thickness. The PE increases with increasing degeneracy and also exhibits spikes for all types of quantum confinement as considered in this paper. The PE increases with increasing photon energy in a step like manner for all the materials due to the redistribution of the electrons among the size-quantized levels for the changes of size quantum number. It may be noted that at the transition zone from one sub band to another, the height of the peaks between any two sub-bands decreases with the increasing in the degree of quantum confinement and is clearly shown in all the curves. The content of this paper finds two applications in the field of nanoscience.
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Document Type: Research Article
Publication date: June 1, 2013
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