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NiO-Based All-Inorganic Quantum-Dot Light-Emitting Diodes by Sol–Gel Method

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The fabrication and characterization of solution-processed, all-inorganic quantum dots light-emitting diodes incorporating colloidal CdSe/ZnS quantum dots are presented. Using a simple sol–gel process, highly luminescent core–shell QDs are embedded between spin-coated p-type NiO hole transport layer (HTL) and n-type ZnO electron transport layer (ETL). The resulting devices show pure QD electroluminescent emissions with a maximum EL brightness of 1015 cd m–2. The current and power efficiency of the all-inorganic QLED exhibited the maximum values of 0.84 cd A–1 and 0.71 lm W–1, respectively.
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Keywords: ALL-INORGANIC; NIO FILM; QUANTUM DOTS LIGHT-EMITTING DIODES (QLEDS); SOL–GEL

Document Type: Research Article

Publication date: June 1, 2016

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  • Journal of Advanced Microscopy Research (JAMR) provides a forum for rapid dissemination of important developments in high-resolution microscopy techniques to image, characterize and analyze man-made and natural samples; to study physicochemical phenomena such as abrasion, adhesion, corrosion and friction; to perform micro and nanofabrication, lithography, patterning, micro and nanomanipulation; theory and modeling, as well as their applications in all areas of science, engineering, and medicine.
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