NiO-Based All-Inorganic Quantum-Dot Light-Emitting Diodes by Sol–Gel Method
The fabrication and characterization of solution-processed, all-inorganic quantum dots light-emitting diodes incorporating colloidal CdSe/ZnS quantum dots are presented. Using a simple sol–gel process, highly luminescent core–shell QDs are embedded between spin-coated p-type NiO hole transport layer (HTL) and n-type ZnO electron transport layer (ETL). The resulting devices show pure QD electroluminescent emissions with a maximum EL brightness of 1015 cd m–2. The current and power efficiency of the all-inorganic QLED exhibited the maximum values of 0.84 cd A–1 and 0.71 lm W–1, respectively.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Publication date: June 1, 2016
More about this publication?
- Journal of Advanced Microscopy Research (JAMR) provides a forum for rapid dissemination of important developments in high-resolution microscopy techniques to image, characterize and analyze man-made and natural samples; to study physicochemical phenomena such as abrasion, adhesion, corrosion and friction; to perform micro and nanofabrication, lithography, patterning, micro and nanomanipulation; theory and modeling, as well as their applications in all areas of science, engineering, and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites