Thermal Simulation of Light-Emitting Diode Panel with Heat Sink
The aim of this study is to simulate and investigate the heat transfer phenomenon of light emitting diode packages. The performance of FR-4 and MCPCB dielectric materials with thermal conductivity of 0.3 W/mK and 201 W/mK respectively are numerically compared. MCPCB material is found to be an effective base that holds 34.8 °C for an input power of 0.5 W on a single 1 mm×1 mm GaN chip. For LED chip materials, the maximum temperature is 34.8 °C for GaN with thermal conductivity of 130 W/mK; 34.9 °C for GaP with 110 W/mK; and 34.5 °C for AlN with thermal conductivity of 285 W/mK. The simulation results show that the size of the base and the thickness of the heat sink fins are also important factors to be considered in the design.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Research Article
Affiliations: Faculty of Engineering and Green Technology, Universiti Tunku Abdul Rahman, Kampar Campus, Malaysia
Publication date: November 1, 2017
More about this publication?
- ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites