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Residual Stress in Sputtered ZnO Films Grown on Unheated Substrates

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Zinc Oxide (ZnO) thin films were fabricated on unheated glass substrates using rf magnetron sputtering technique. The effect of varying oxygen content of sputtering gas on the structural, morphological and residual stress in the films is discussed. X-ray Diffraction (XRD) spectra suggests the fabrication of highly oriented hexagonal wurtzite structured ZnO thin films along (002) plane having nanometer sized crystallites. The defect content in the growing film is found to influence the residual stress in the films. Oxygen content of 40 to 50% in the sputtering gas yields low tensile stress, and an increasing oxygen content (>50%) in the sputtering gas leads to increasing compressive stress in the films.
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Keywords: Stress; XRD; Zinc Oxide Thin Films

Document Type: Research Article

Affiliations: Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India

Publication date: November 1, 2016

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