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Temperature Dependence of Refractive Index of Al1–x Ga x N Semiconductors

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Ternary alloys Al1–x Ga x N are promising materials to use at high temperature due to their high mechanical hardness, high thermal conductivity and large dielectric constant. The determination of the energy band gap, refractive index and its variation with temperature and composition are fundamentally important to fabricate optoelectronic devices based on these materials. We have presented a theoretical procedure to study temperature dependence of the energy band gap and refractive index for the entire range of the alloy composition x of ternary alloy Al1–x Ga x N. The calculations based on the pseudopotential formalism in which local potential coupled with the virtual crystal approximation (VCA). To include exchange and correlation effects, local field correction function due to Nagy is employed. It is found that the energy band gap decreases while refractive index increases with the increase gallium concentration in Al1–x Ga x N. Refractive index also increases with increase in temperature for different gallium concentration (x). Our results for parent compounds are compared to experiment and other available theoretical findings and showed generally good agreement.
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Keywords: Pseudopotential; Refractive Index; Semiconductor Compound

Document Type: Research Article

Affiliations: 1: Department of Physics, VP and RPTP Science College, Vallabh Vidyanagar 388120, Gujarat, India 2: Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388120, Gujarat, India

Publication date: November 1, 2016

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