Cadmium Selenide (CdSe), one of the important semiconducting chalcogenides, has been investigated by many researchers because of the ability in tailoring its optical band gap and electrical properties. The high photosensitivity and high absorption coefficient of CdSe make it suitable
for applications in solar cells, thin film transistors, gamma ray detectors, gas sensor, acousto optic devices, light emitting diodes (LED), photovoltaic and photoelectron-chemical cells. CdSe thin films were deposited on microslide glass substrates by electron beam evaporation technique at
source and substrate (SS) distance of 10 cm, 12.5 cm and 15 cm and the influence of SS on the properties of deposited films were studied. X-ray diffraction analysis shows that deposited CdSe films belong to hexagonal crystal structure with preferential orientation along (002) plane. Morphology
of CdSe thin film deposited at 10 cm shows spherical balls like structure uniformly distributed on its surface. CdSe film coated at SS 12.5 cm shows accumulations of grains with various shapes and sizes. The surface of the film deposited at 15 cm shows small grains spread over it. Elemental
analysis shows that film deposited at 15 cm is nearly in stoichiometric ratio.
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Document Type: Research Article
Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, Kancheepuram Dt. 603203, Tamil Nadu, India
Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620024, Tamil Nadu, India
Publication date: November 1, 2016
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