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Vacuum Deposition of Sulfide Semiconductors Films in Sulfurizing Environment by Modified Evaporation Technique

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Vacuum deposited thin films of binary compound sulfide semiconductors lack stoichiometry due to thermal decomposition of the compound during deposition. The constituents of compound vaporize in a ratio proportional to their vapor pressures as high vapor pressure constituent vaporize more rapidly than the low vapor pressure constituent material, which adversely effects the quality and crystalline characteristics of the films. In order to maintain the stoichiometry of films, the deposition was carried out in a sulfurizing environment of hydrogen sulfide (H2S) by modified evaporation technique. An additional arrangement has been made in traditional vacuum deposition technique to create low ambient atmosphere of H2S inside the vacuum chamber. The sulfurizing environment was created by thermal decomposition of thiourea inside the vacuum chamber during deposition to maintain the stoichiometry, and quality of the films. The characterization of films revealed that the surface and stoichiometry of the films deposited in sulfurizing environment have improves in comparison to films deposited without sulfurizing environment. Moreover, these films are more uniform, more adhesive and pin hole free and would be inherently more suitable for any electro-optical device fabrication.
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Keywords: Hydrogen Sulfide; Stoichiometry; Sulfide Semiconductors; Thiourea; Vacuum Evaporation

Document Type: Research Article

Affiliations: Department of Physics, Ch. Charan Singh University, Meerut 250004, U.P, India

Publication date: November 1, 2016

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