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Dielectric and Thermal Analyses of TiO2 Doped KNbO3 Single Crystals

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The doped KNbO3 single crystals were prepared using flux method by taking K2CO3 and Nb2O5 as a starting material in the molar ratio of 1.2:1 with an impurity of TiO2 (10 mg). The effect of TiO2 doping on phase transition temperatures of KNbO3 single crystals was investigated. The dielectric studies and thermal characterization techniques were used to probe phase transition temperatures and dielectric behavior of TiO2 doped KNbO3 single crystals. The X-ray diffraction showed the presence of single phase and lattice parameters were found to be a = 5.6821 Å, b = 3.9609 Å and c = 5.7064 Å with volume of the unit cell V = 128.43 Å3. The present material is orthorhombic at room temperature with space group PCCA. Our results reveal that phase transition temperatures are 235 °C, 450 °C which are confirmed by dielectric and thermal characterizations with some thermal hysteresis which may be due to TiO2 doping. Electrical properties were studied over a wide range of frequency, which show that dielectric constant and dielectric loss factor decreases with frequency.
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Keywords: Dielectric Properties; Thermal Properties; TiO2 Doped KNbO3; XRD

Document Type: Research Article

Affiliations: 1: Laxminarayan Institute of Technology, RTM Nagpur University, Nagpur 440033, India 2: Arts, Commerce and Science College, Kiran Nagar, Amravati 444606, India

Publication date: November 1, 2016

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