Structural and Optical Properties of GeO2 Thin Films Prepared by E-Beam Evaporation
GeO2 thin films were grown on silicon and quartz substrates at 150 °C by using electron beam evaporation. The subsequent thermal annealing of thin films at 800 °C results in crystallization of the films. The structural properties of pristine and annealed samples have been studied by using X-ray diffraction, Fourier transform infrared spectroscopy and Raman spectroscopy. UV-visible absorption spectroscopy is used to examine the optical properties of the thin films. While as-deposited samples show amorphous behavior, the annealed samples clearly imply the crystalline nature of the films. XRD results indicate the formation of hexagonal phase of GeO2 NC’s upon annealing at 800 °C. Raman scattering studies confirm the modes of vibration of GeO2. Transmission spectra of GeO x films also show various modes of vibration of Germanium oxide. Optical studies suggest that the annealing results in the increase in the bandgap and transmittance of the films. The bandgap of the pristine and annealed samples are 4.2 eV and 5.65 eV, respectively.
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Document Type: Research Article
Affiliations: Department of Physics, Malaviya National Institute of Technology Jaipur, J. L. N. Marg, Jaipur 302017, India
Publication date: November 1, 2016
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