Effect of Electrode Absorption on the Extraction Efficiency in an Light Emitting Diode
In a GaN based LED, if the electrode absorption is 100%, the extraction efficiency is about 36.3%, when a photon emission point is not located under the p-electrode, but about 17.5% when located under the p-electrode. If the electrode absorption is 50%, the light extraction efficiency is about 37.5%, when a photon emission point is not located under the p-electrode, but about 26.3% when located under the p-electrode.
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Document Type: Research Article
Affiliations: Divition of Electrical, Electronic and Control Eng., Kongju National University, Korea 31080
Publication date: November 1, 2016
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