Skip to main content

35 nm InAlAs/InGaAs Based Single Gate and Dual Gate High Electron Mobility Transistor: A Comparison

Buy Article:

$107.14 + tax (Refund Policy)

The paper presents the comparison between a 35 nm InAlAs/InGaAs based Single Gate (SG) and Dual Gate (DG) High Electron Mobility Transistor. The detailed simulation has been done taking DC and RF characteristics into account. For a DG-HEMT, a maximum drain–source current (I ds) of 763 mA/mm at V gs = –0.1 V, a peak transconductance (g m) of 2043 mS/mm, a cutoff frequency (f T ) of 1.55 THz and a maximum oscillation frequency (f max) of 1.75 THz have been achieved which is 49.8%, 62.1%, 35.4%, 34.2% higher than a SG-HEMT respectively.


Document Type: Research Article

Publication date: February 1, 2016

More about this publication?
  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Ingenta Connect is not responsible for the content or availability of external websites
  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content