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Preparation and Characterization of TiO2 Film on Si(111) Surface

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TiO2 films have been prepared by pulsed laser deposition method on Si(111) surface and characterized by using X-ray Diffraction as well as Raman spectroscopy. The surface morphology is studied by Atomic Force Microscopy (AFM). The XRD along with Raman data indicated that our deposited film is in anatase phase. AFM topography of as deposited film indicates the formation of nano structured non uniform TiO2 growth with pits and cracks on silicon substrate. Pit size increases after sputtering the surface with argon ion beam.
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Keywords: AFM; PULSED LASER DEPOSITION; RAMAN

Document Type: Research Article

Publication date: February 1, 2016

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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