Preparation and Characterization of TiO2 Film on Si(111) Surface
TiO2 films have been prepared by pulsed laser deposition method on Si(111) surface and characterized by using X-ray Diffraction as well as Raman spectroscopy. The surface morphology is studied by Atomic Force Microscopy (AFM). The XRD along with Raman data indicated that our deposited film is in anatase phase. AFM topography of as deposited film indicates the formation of nano structured non uniform TiO2 growth with pits and cracks on silicon substrate. Pit size increases after sputtering the surface with argon ion beam.
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Document Type: Research Article
Publication date: February 1, 2016
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