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Structural and Electrical Properties of Fe Doped ZnO/GaSb Heterostructure Thin Film for Device Application

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Ingot of GaSb was synthesized byvertical direction solidification (VDS) method in a temperature controlled vertical tube furnace by taking a conical tip quartz ampoule inside it. The synthesized ingot was then put inside thermal evaporation unit to prepare a thin film of GaSb on glass substrate. The film of Fe doped ZnO synthesized by sol–gel was grown on GaSb thin film on glass substrate by and indigenously designed chemical wet and dry (CWD) technique. The formation of crystalline structure of bulk GaSb and the structural property of ZnO/GaSb thin film have been analyzed by X-ray diffraction (XRD). From Hall Effect study it was observed that the grown undoped GaSb thin film sample is p-type where as Fe doped ZnO thin film sample is n-type. The n-ZnO/p-GaSb heterostructure was characterized by studying its band diagram and current–Voltage (I–V) characteristic at 300 K. The conduction band and valence band discontinuities were calculated and also the turn on voltage and forward saturation current were found out.
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Document Type: Research Article

Publication date: February 1, 2016

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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