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Study of 65 nm n-MOSFET Using SILVACO TCAD

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The electrical characterization of 65 nm NMOS transistor structure is simulated by the ATLAS simulator software and then it is compared with the reported experimental results. The input and output characteristics of the structure was studied. The simulated threshold voltage was found to be 0.2 V which matches well with the experimental value. Furthermore, various short channel effects like punch through, velocity saturation and hot electron effects are studied. From the study it was found that for higher drain voltage, the amount of gate voltage which the device will be able to sustain before giving rise to gate current is less.
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Keywords: CHANNEL LENGTH; SHORT CHANNEL EFFECTS; SILVACO; TCAD

Document Type: Research Article

Publication date: February 1, 2016

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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