Effect of Laser Irradiation on the Optical Properties of As40Se55Sb5 Thin Films
The wide range of transmission and photo induced properties of chalcogenide materials make them useful and interesting in modern technology. The optical band gap, refractive index, extinction coefficient like parameters are important for preparation of the device for a particular wavelength. The 532 nm laser induced optical changes in thermally evaporated As40Se55Sb5 thin film is being reported in the present paper. The amorphous nature of the film is confirmed from the X-ray diffraction. The Swanepoel method was used to determine the thickness, refractive index and absorption coefficient by using the transmission spectra. The optical band gap was calculated from the absorption spectra by using Tauc relation. The optical band gap is reduced by 0.05 eV due to laser irradiation causing photo darkening process and the refractive index is increased due to increase in disorderness. The X-ray photoelectron spectra supports the optical changes that occurred in the films.
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Document Type: Research Article
Publication date: February 1, 2016
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