Effect of Doping on Dielectric Loss of Sodium Silicate Ceramic

The investigation of the effect of doping on dielectric loss (tanδ) has been carried out for both doped and undoped sodium silicate samples. The dielectric loss of the samples has been studied in a wide range of frequency (100 kHz–5 MHz) and temperature (50 °C–450 °C). The micro-structure of the samples have been identified and analyzed by XRD, FESEM and DTA. The experimental result indicates high value of dielectric loss in the low frequency region for both doped and undoped samples. Experimental result also supports strong dispersion and good ionic conduction in the low frequency region. The variation of loss as the function of temperature shows temperature dependent relaxation property of the sample. Experimental results reveal strong dependency of loss tangent on doping concentration.