Synthesis of SiC Nanoporous Membrane Using Ion Track Etching Technique
Silicon carbide films were prepared by rf-magnetron sputtering from silicon carbide target onto Si(100) substrates kept at constant temperature T = 600 K, with power of 300 W and argon gas working pressure of 10−2 Pa. Low argon pressure enabling production of highly pure, uniform silicon carbide films with a smooth structure. Using ion track etching technique a nanoporous films of SiC with controlled pore size and porosity were prepared. The freestanding membranes were obtained by standard silicon fabrication procedures. It has been shown that nanoporous SiC membranes can be made with a wide variety of pore sizes, shapes and densities by varying the conditions of pore formation. Thus, it is feasible to fabricate nanopores with high density in silicon carbide membrane with designed nanopore size and density.
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Document Type: Research Article
Publication date: December 1, 2013
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