Investigating the Properties of ZnO–Al2O3–Y2O3 Transparent Conductive Metal Oxide Thin Films Prepared by E-Beam Physical Vapor Deposition
A ZnO–Al2O3–Y2O3 (AZYO) ternary compound was sintered at 1100 °C as a target and deposited on glass using an electron beam evaporation system. The effects of substrate temperature (25∼110 °C) and deposition (oxygen) pressure (1×10−3 Torr and 1×10−4 Torr) on deposition rate, morphology, roughness, resistivity, and optical transmission spectrum were studied. The deposition rate increased as the oxygen pressure increases from 1×10−4 Torr to 1×10−3 Torr and the deposition rate linearly decreased with increasing deposition temperature. From the XRD patterns, all the AZYO thin films still exhibited the (002) peak at around 2 = 34.40°. The Burstein-Moss shift was observed and used to prove that defects in the AZYO thin films decreased with increasing substrate temperature. The value variations in the band gap energy (Eg) of the AZYO thin films were evaluated from plots of (αhν)1/2 versus energy. The measured Eg values increased with increasing substrate temperature and slightly increased with increasing oxygen pressure.
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Document Type: Research Article
Publication date: November 1, 2013
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