Influence of Substrate Temperature on Electrical and Optical Properties of Al-Doped ZnO Thin Films
Aluminum-doped ZnO films were deposited on glass substrate at substrate temperatures varying from room temperature to 275 °C by RF (radio frequency) magnetron sputtering. The effect of substrate temperature on the electrical and optical properties together with the surface morphology was investigated. Electrical properties including the resistivity, carrier concentration and mobility of AZO films were evaluated by Hall effect measurements. Optical transmittance was measured with a Perkin-Elmer Lambda spectrometer. The crystalline structure and preferred orientation of the AZO films were investigated by X-ray diffraction (XRD). At low substrate temperature (25 °C) AZO films have high resistivity (3.01 × 10−2 Ω cm) with small carrier concentration (3.3 × 1019 cm−3), while the one prepared at higher temperature (275 °C) has low resistivity (2.14 × 10−3 Ω cm) with large carrier concentration (1.57 × 1020 cm−3). The increase of substrate temperature enhances the doping efficiency yielding to films with a lower resistivity and wider band gap energy. Present work shows that the enhancement of the AZO film performance with high transparency and low resistivity can be achieved by increasing the substrate temperature.
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Document Type: Research Article
Publication date: September 1, 2013
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