Analysis the Electrical Properties of Diode at Low Dose X-Ray Irradiation

The effect of X-ray radiation damage in P–N junction diode is discussed. Electrical characteristics of P–N junction diode can be analyzed by current–voltage (I–V) measurement. This paper investigates X-ray irradiation by its electrical characteristics of difference X-ray exposure time. The X-ray energy use to expose 40 keV various time in the range 5–125 second of exposure. Leakage current after irradiation at 5 and 15 second are increase, while increase irradiation time the leakage current are reduced back to close before irradiation. X-rays are induced defect at 5 and 15 second, while defects reduced after irradiation at 125 second. The result shows that the time of X-ray exposure at 75 and 125 second can reduced defect in P–N junction diode.